IPD50R500CEAUMA1 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IPD50R500CEAUMA1
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حجم فایل
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33.124
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IPD50R500CEAUMA1
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
57W
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Total Gate Charge (Qg@Vgs):
18.7nC@10V
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Drain Source Voltage (Vdss):
550V
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Input Capacitance (Ciss@Vds):
433pF@100V
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Continuous Drain Current (Id):
7.6A
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@200uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
500mΩ@13V,2.3A
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Package:
TO-252
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Manufacturer:
Infineon Technologies
